Zn incorporation in CuInSe2: Particle size and strain effects on microstructural and electrical properties.
Fiche publication
Date publication
mai 2014
Auteurs
Membres identifiés du Cancéropôle Est :
Pr FROMM Michel
Tous les auteurs :
Benabdeslem M, Bouasla A, Benslim N, Bechiri L, Mehdaoui S, Aissaoui O, Djekoun A, Fromm M, Portier X
Lien Pubmed
Résumé
Incorporation of the doping element Zn in the temperature range (550-700 degrees C) and the impact on structural and electrical properties of CuInSe2 material are investigated. X-ray diffraction patterns showed the chalcopyrite nature of the pure and doped CuInSe2 and revealed that diffusion temperature governs particle size as well as tensile strain. The calculated lattice parameters and cell volumes revealed that Zn diffuses in CuInSe2 by substitution on Cu sites. Electrical properties of the material have been investigated using a contact-less technique based on high frequency microwave (HF). It is found that Zn atoms influence the defect equilibrium resulting in the conversion of the conduction type. The conductivity of the samples has been found increasing as the diffusion temperature increases.
Référence
Bull Mat Sci. 2014 May;37(3):469-72.